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Electrical characterization of deep levels in N and P 6H-SiC Schottky diodes

✍ Scribed by N. Sghaier; A. K. Souifi; J. M. Bluet; G. Guillot

Book ID
110298679
Publisher
Springer US
Year
2001
Tongue
English
Weight
258 KB
Volume
12
Category
Article
ISSN
0957-4522

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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t