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Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

✍ Scribed by B. J. Skromme; E. Luckowski; K. Moore; M. Bhatnagar; C. E. Weitzel; T. Gehoski; D. Ganser


Book ID
107452435
Publisher
Springer US
Year
2000
Tongue
English
Weight
211 KB
Volume
29
Category
Article
ISSN
0361-5235

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## Abstract The analysis of β€œnonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie