Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch
β¦ LIBER β¦
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
β Scribed by M. L. Bolen; M. A. Capano
- Book ID
- 107455368
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 1002 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0361-5235
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