𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes

✍ Scribed by S. Duman; S. Dogan; B. Gürbulak; A. Türüt


Book ID
106020950
Publisher
Springer
Year
2008
Tongue
English
Weight
367 KB
Volume
91
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


The effects of the temperature and annea
✍ A. Sefaoğlu; S. Duman; S. Doğan; B. Gürbulak; S. Tüzemen; A. Türüt 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 208 KB

The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It ha