Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition

Experimental determination of the latera

Experimental determination of the laterally homogeneous barrier height of Au/n-Si Schottky barrier diodes

✍ M. Sağlam; F.E. Cimilli; A. Türüt 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 279 KB

We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I2V ) and