Experimental determination of the laterally homogeneous barrier height of Au/n-Si Schottky barrier diodes

✍ Scribed by M. Sağlam; F.E. Cimilli; A. Türüt

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 279 KB
• Volume: 348
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2004.01.002

✦ Synopsis

We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I2V ) and reverse bias capacitance-voltage (C2V ) characteristics. The BH for the Au/n-Si/Au-Sb diodes from the I2V characteristics varied from 0.789 to 0.819 eV, the ideality factor n varied from 1.051 to 1.179, and the BH from C À2 2V characteristics varied from 0.801 to 0.851 eV. The Gaussian fits of he experimental Schottky BH distributions obtained from the C À2 2V and I2V characteristics have yielded a mean BH values of 0.808 and 0.809 eV, respectively, that are in close agreement with value of about 0.805 eV predicted by metal-induced gap states (MIGS) and chemical electronegativity concepts for Au/n-Si SDs. Furthermore, the lateral homogeneous BH value of approximately 0.834 eV were also computed from the extrapolation of the linear plot of experimental BHs versus ideality factors.