Thermally grown amorphous SiO 2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 โข 10 16 to 8.6 โข 10 17 C ions/cm 2 , then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 โข 10 11 to 3.8 โข 10 12 ions/cm 2 , re
Barrier height modification of Au/n-Si Schottky structures by swift heavy ion irradiation
โ Scribed by Sandeep Kumar; D. Kanjilal
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 127 KB
- Volume
- 248
- Category
- Article
- ISSN
- 0168-583X
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๐ SIMILAR VOLUMES
Ions with energies larger than 100 keV/amu produce high densities of electronic excitations in narrow cylindrical volumes around their path. The perturbation of the electronic system is transferred to the atomic network, leading to structural transformations such as the nucleation of metal particles
Supersaturated Fe-1.2 wt.% Cu alloys were irradiated with 200 MeV Xe and 200 MeV Au ions at elevated temperatures. To make an irradiated region and an unirradiated region in specimens, a masking plate was put on the specimen during the irradiation. After the irradiation, the hardness was measured by