Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

✍ Scribed by Z.G. Wang; Z.M. Zhao; A. Benyagoub; M. Toulemonde; F. Levesque; Y. Song; Y.F. Jin; Y.M. Sun; C.B. Liu; H. Zang; K.F. Wei

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 388 KB
• Volume: 256
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.12.071

✦ Synopsis

Thermally grown amorphous SiO 2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 • 10 16 to 8.6 • 10 17 C ions/cm 2 , then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 • 10 11 to 3.8 • 10 12 ions/cm 2 , respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C@C(O), C"C and Si(C)-O-C bonds formed significantly in the C-doped SiO 2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO 2 induced by swift heavy ion irradiations were discussed.