Thermally grown amorphous SiO 2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 โข 10 16 to 8.6 โข 10 17 C ions/cm 2 , then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 โข 10 11 to 3.8 โข 10 12 ions/cm 2 , re
โฆ LIBER โฆ
Swift heavy ion irradiation of Pt nanocrystals embedded in SiO2
โ Scribed by R. Giulian; P. Kluth; D.J. Sprouster; L.L. Araujo; A. Byrne; M.C. Ridgway
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 368 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0168-583X
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