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Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

✍ Scribed by V. Khemka; T. P. Chow; R. J. Gutmann

Book ID: 107457749
Publisher: Springer US
Year: 1998
Tongue: English
Weight: 233 KB
Volume: 27
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0150-z

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