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The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN

✍ Scribed by A. T. Ping; Q. Chen; J. W. Yang; M. Asif Khan; I. Adesida

Book ID: 107457809
Publisher: Springer US
Year: 1998
Tongue: English
Weight: 184 KB
Volume: 27
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0397-4

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