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A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts

โœ Scribed by A. K. Fung; J. E. Borton; M. I. Nathan; J. M. Van Hove; R. Hickman; P. P. Chow; A. M. Wowchak

Book ID
107457920
Publisher
Springer US
Year
1999
Tongue
English
Weight
200 KB
Volume
28
Category
Article
ISSN
0361-5235

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โœ Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 573 KB

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 ร‚ 10 -3 O cm 2 upon annealing at 650