Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

✍ Scribed by Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won Yoon; Jae-Pyoung Ahn; Tae-Yeon Seong

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 573 KB
• Volume: 13
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2010.12.005

✦ Synopsis

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 Â 10 -3 O cm 2 upon annealing at 650