Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn–Ag interlayer

✍ Scribed by June-O Song; Kyung-Kook Kim; Hyunsoo Kim; Yong-Hyun Kim; Hyun-Gi Hong; Hyeonseok Na; Tae-Yeon Seong

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 446 KB
• Volume: 10
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2007.12.001