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Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN

✍ Scribed by J Yan; M.J Kappers; Z.H Barber; C.J Humphreys


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
171 KB
Volume
234
Category
Article
ISSN
0169-4332

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Effect of a trace of water vapor on Ohmi
✍ W.S. Lau; W.T. Wong; Joy B.H. Tan; B.P. Singh πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 208 KB

The authors observed that a trace of water vapour can have a significant degradation effect on Ohmic contact formation for AlGaN/ GaN high electron mobility transistors (HEMTs). The degradation effect due to a trace of water vapour is less serious for n-GaN. This is a more serious problem for AlGaN/