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Reduction of ohmic contact resistivity on p-type GaN by surface treatment

โœ Scribed by Jong Kyu Kim; Ho Won Jang; Changmin Jeon; Jong-Lam Lee


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
158 KB
Volume
1
Category
Article
ISSN
1567-1739

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The electrical and optical characteristics of Zn + ion-implanted Ni/Au ohmic contacts to p-GaN were investigated. After the preparation of Ni/Au electrode on the surface of p-GaN, the metal/p-GaN contact interface was doped by 35 keV Zn + implantation with fluences of 5 ร‚ 10 15 -5 ร‚ 10 16 cm ร€2 . Su