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Influence of reactive ion etching damage on the Schottky barrier height of Ti/p–Si interface

✍ Scribed by N Fujimura; T Yamaguchi; H Kato; T Ito

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 328 KB
Volume: 159-160
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(00)00069-6

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✦ Synopsis

Ž

. Change in Schottky barrier height SBH of TirSi surface damaged by CHF rO plasma treatment was investigated as a 3 2 function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the annealing temperature up to 4008C, while SBH of the samples without damage did not change. It was found that the increase in SBH was due to the formation of Ti Si under the influence of the 5 3 plasma-induced damage. At the annealing temperature of 6008C, the SBH values of damaged and undamaged interfaces became almost identical due to C49 TiSi formation.

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