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Experimental investigation of the dependence of barrier height on metal work function for metalSiO2pSi (MIS) Schottky-barrier diodes in the presence of inversion

✍ Scribed by P. Chattopadhyay; V. Kumar


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
353 KB
Volume
31
Category
Article
ISSN
0038-1101

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