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Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

✍ Scribed by Jenny, J. R.; Skowronski, J.; Mitchel, W. C.; Hobgood, H. M.; Glass, R. C.; Augustine, G.; Hopkins, R. H.

No coin nor oath required. For personal study only.

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