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A 3 kV Schottky barrier diode in 4H-SiC

✍ Scribed by Wahab, Q.; Kimoto, T.; Ellison, A.; Hallin, C.; Tuominen, M.; Yakimova, R.; Henry, A.; Bergman, J. P.; JanzeÌn, E.

No coin nor oath required. For personal study only.

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