✦ LIBER ✦

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

✍ Scribed by Zhao, J.H.; Alexandrov, P.; Li, X.

Book ID: 120216247
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 265 KB
Volume: 24
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2003.813370

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A 3 kV Schottky barrier diode in 4H-SiC

✍ Wahab, Q.; Kimoto, T.; Ellison, A.; Hallin, C.; Tuominen, M.; Yakimova, R.; Henr 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 291 KB

4.3 kV 4H-SiC merged PiN/Schottky diodes

✍ Wu, Jian; Fursin, Leonid; Li, Yuzhu; Alexandrov, Petre; Weiner, M; Zhao, J H 📂 Article 📅 2006 🏛 Institute of Physics 🌐 English ⚖ 269 KB

Barrier inhomogeneities of tungsten Scho

Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

✍ Hamida, A Ferhat; Ouennoughi, Z; Sellai, A; Weiss, R; Ryssel, H 📂 Article 📅 2008 🏛 Institute of Physics 🌐 English ⚖ 553 KB

Performance and Stability of Large-Area

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

✍ Hull, B.A.; Sumakeris, J.J.; O'Loughlin, M.J.; Qingchun Zhang; Richmond, J.; Pow 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 588 KB

Investigation of barrier inhomogeneities

Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

✍ L. Boussouar; Z. Ouennoughi; N. Rouag; A. Sellai; R. Weiss; H. Ryssel 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 860 KB

Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch

High performance of high-voltage 4H-SiC

High performance of high-voltage 4H-SiC Schottky barrier diodes

✍ Itoh, A.; Kimoto, T.; Matsunami, H. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 266 KB