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Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

✍ Scribed by Hamida, A Ferhat; Ouennoughi, Z; Sellai, A; Weiss, R; Ryssel, H


Book ID
120241819
Publisher
Institute of Physics
Year
2008
Tongue
English
Weight
553 KB
Volume
23
Category
Article
ISSN
0268-1242

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## Abstract In order to investigate the Schottky barrier height inhomogeneities in 4H silicon carbide Schottky rectifiers, two surface modification processes were developed to control the influence caused by the surface defects. Both forward and reverse electrical characteristics of Schottky contac