Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch
β¦ LIBER β¦
Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC
β Scribed by Hamida, A Ferhat; Ouennoughi, Z; Sellai, A; Weiss, R; Ryssel, H
- Book ID
- 120241819
- Publisher
- Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 553 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0268-1242
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