✦ LIBER ✦

An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps

✍ Scribed by Kung-Yen Lee; Yan-Hao Huang

Book ID: 114620865
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 471 KB
Volume: 59
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2181391

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of barrier inhomogeneities

Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes

✍ L. Boussouar; Z. Ouennoughi; N. Rouag; A. Sellai; R. Weiss; H. Ryssel 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 860 KB

Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch

Barrier inhomogeneities of tungsten Scho

Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

✍ Hamida, A Ferhat; Ouennoughi, Z; Sellai, A; Weiss, R; Ryssel, H 📂 Article 📅 2008 🏛 Institute of Physics 🌐 English ⚖ 553 KB

The impact of surface morphology on C- a

The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes

✍ Kung-Yen Lee; Chih-Fang Huang; Wenzhou Chen; Michael A. Capano 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 490 KB

The Correlation of Surface Defects and R

The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes

✍ Kung-Yen Lee; Michael A. Capano 📂 Article 📅 2007 🏛 Springer US 🌐 English ⚖ 338 KB

Effect of reactive ion etch-induced dama

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

✍ V. Khemka; T. P. Chow; R. J. Gutmann 📂 Article 📅 1998 🏛 Springer US 🌐 English ⚖ 233 KB

Barrier inhomogeneities and electrical c

Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments

✍ Pérez, R. ;Mestres, N. ;Montserrat, J. ;Tournier, D. ;Godignon, P. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 127 KB

## Abstract The analysis of “nonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie