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Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers

✍ Scribed by Gelczuk, Ł.; Dąbrowska-Szata, M.; Sochacki, M.; Szmidt, J.

Book ID: 122330222
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 614 KB
Volume: 94
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2014.02.008

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