Electrical and structural investigation of triangular defects in 4H-SiC junction barrier Schottky devices

✍ Scribed by Berechman, R. A.; Skowronski, M.; Zhang, Q.

• Book ID: 120085202
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 863 KB
• Volume: 105
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3103308