✦ LIBER ✦
Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current–Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes
✍ Scribed by Mochizuki, K.; Kameshiro, N.; Onose, H.; Yokoyama, N.
- Book ID
- 114619572
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 844 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0018-9383
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