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Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

✍ Scribed by Fabrizio Roccaforte; Ming-Hung Weng; Corrado Bongiorno; Filippo Giannazzo; Ferdinando Iucolano; Vito Raineri


Publisher
Springer
Year
2010
Tongue
English
Weight
377 KB
Volume
100
Category
Article
ISSN
1432-0630

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