## Abstract In order to investigate the Schottky barrier height inhomogeneities in 4H silicon carbide Schottky rectifiers, two surface modification processes were developed to control the influence caused by the surface defects. Both forward and reverse electrical characteristics of Schottky contac
Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
โ Scribed by Defives, D.; Noblanc, O.; Dua, C.; Brylinski, C.; Barthula, M.; Aubry-Fortuna, V.; Meyer, F.
- Book ID
- 114537571
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 217 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0018-9383
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