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The investigation of key technologies for sub-0.1-μm CMOS device fabrication

✍ Scribed by Qiuxia Xu; He Qian; Huaxiang Yin; Lin Jia; Honghao Ji; Baoqing Chen; Yajiang Zhu; Min Liu; Zhensheng Han; Huanzhang Hu; Yulin Qiu; Dexin Wu


Book ID
114538737
Publisher
IEEE
Year
2001
Tongue
English
Weight
227 KB
Volume
48
Category
Article
ISSN
0018-9383

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## Abstract A K‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology. The cascaded common‐source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate‐source transformer feedback technique was employed to ach