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Metallized ultra-shallow-junction device technology for sub-0.1 μm gate MOSFET's

✍ Scribed by Hisamoto, D.; Nakamura, K.; Saito, M.; Kobayashi, N.; Kimura, S.; Nagai, R.; Nishida, T.; Takeda, E.

No coin nor oath required. For personal study only.

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