✦ LIBER ✦

A K-band low-noise amplifier in 0.18-μm CMOS technology for SUB-1-V operation

✍ Scribed by Jun-De Jin; Shawn S. H. Hsu

Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 174 KB
Volume: 51
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.24530

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✦ Synopsis

Abstract

A K‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology. The cascaded common‐source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate‐source transformer feedback technique was employed to achieve a low noise figure (NF), which also enabled a single power supply operation and without using any resistive components. Under a supply voltage of only 0.8 V and a DC power consumption P~DC~ of 12.6 mW, the measured gain and NF are 14.5 and 5.3 dB at 21 GHz, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2202–2204, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24530

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