## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and
A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-μm CMOS technology
✍ Scribed by C. C. Meng; M. H. Chiang; T. H. Wu
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 314 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4‐GHz CMOS LNA has 5.27‐dB power gain, 17‐dB input return loss, 15‐dB output return loss, 4‐dB noise figure, and −1‐dBm IIP~1dB~ and 8‐dBm IIP~3~ at V~dd~ = 1.2 V and I~dd~ = 10 mA, respectively. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 136–139, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10699
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