✦ LIBER ✦

A 3-mW concurrent 2.4/5.2-GHz dual-band low-noise amplifier for WLAN applications in 0.18-μm CMOS technology

✍ Scribed by Tai-Hsing Lee; Yo-Sheng Lin

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 249 KB
Volume: 42
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.20280

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and output return losses more than 10 dB were obtained at both 2.4 and 5.2 GHz. In addition, IIP3 of 17 and 5 dBm were achieved at 2.4 and 5.2 GHz, respectively. No off‐chip components were required for input and output matching. To our knowledge, this LNA exhibits a state‐of‐the‐art performance. Due to the careful selection of the size of the transistors and the passive elements in our proposed method power matching and noise matching can be achieved simultaneously at the dual‐band of interest. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 287–292, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20280

📜 SIMILAR VOLUMES

A 1.2-V fully integrated 2.4-GHz low-noi

A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-μm CMOS technology

✍ C. C. Meng; M. H. Chiang; T. H. Wu 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 314 KB

## Abstract A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high out

A K-band low-noise amplifier in 0.18-μm

A K-band low-noise amplifier in 0.18-μm CMOS technology for SUB-1-V operation

✍ Jun-De Jin; Shawn S. H. Hsu 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 174 KB

## Abstract A K‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology. The cascaded common‐source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate‐source transformer feedback technique was employed to ach

A novel tunable dual-band low noise ampl

A novel tunable dual-band low noise amplifier for 868/915 MHz and 2.4 GHz Zigbee application by CMOS technology

✍ Kai Xuan; Kim Fung Tsang; Wah Ching Lee 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 391 KB

## Abstract A dual‐band (868/915 MHz and 2.4 GHz) low noise amplifier for Zigbee applications is designed using 0.35‐μm CMOS technology.At 868/915 MHz and 2.4 GHz, the gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output r