✦ LIBER ✦

A novel tunable dual-band low noise amplifier for 868/915 MHz and 2.4 GHz Zigbee application by CMOS technology

✍ Scribed by Kai Xuan; Kim Fung Tsang; Wah Ching Lee

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 391 KB
Volume: 52
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.24964

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A dual‐band (868/915 MHz and 2.4 GHz) low noise amplifier for Zigbee applications is designed using 0.35‐μm CMOS technology.At 868/915 MHz and 2.4 GHz, the gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output reflections are below −10 dB in both bands. The amplifier works at 2.5 V supply voltage with 12 mA current dissipation. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 507–510, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24964

📜 SIMILAR VOLUMES

A 3-mW concurrent 2.4/5.2-GHz dual-band

A 3-mW concurrent 2.4/5.2-GHz dual-band low-noise amplifier for WLAN applications in 0.18-μm CMOS technology

✍ Tai-Hsing Lee; Yo-Sheng Lin 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 249 KB

## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and