## Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc po
A 1-V, 6-mA, 3–6 GHz broadband 0.18-μm CMOS low-noise amplifier for UWB receiver
✍ Scribed by C.-P. Chang; C.-C. Yen; H.-R. Chuang
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 346 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 3–6 GHz broadband CMOS single‐ended LNA fabricated with the 0.18 μm 1P6M process for UWB and WLAN receiver is presented. Due to its noncascode circuit architecture, the proposed LNA can operate under 1V supply voltage and 6mA current consumption. In the UWB low band (3.1–5.15 GHz), the broadband LNA exhibit a gain of 11.7–13.7dB, noise figure less than 4.9 dB and input return loss better than 13.2 dB, respectively. From 5–6 GHz range (covering Hiperlan, 802.11a, and MBOA group B), the LNA exhibit a gain of 12.4–12.7 dB, noise figure less than 5.5 dB and input return loss better than 15.7 dB, respectively. The input P~1dB~ and IIP3 are −20 dBm and −10.9 dBm, respectively. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1358–1360, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22428
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