## Abstract A 2.4 GHz subthreshold CMOS low‐noise amplifier (LNA) employing current‐reuse technique is presented for the first time. The circuit measuring 1050 × 723 μm^2^ is designed using CHRT's 0.18 μm RF CMOS technology. With the push–pull configuration, the amplifier simulated using Spectre® h
A 0.6 V low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications
✍ Scribed by Jeng-Han Tsai; Yi-Jhang Lin; Hao-Chun Yu
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 484 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:145–147, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26463
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