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A fully integrated low voltage (0.5 V) X-band CMOS low noise amplifier

✍ Scribed by Baohong Liu; Jianjun Zhou; Junfa Mao

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
180 KB
Volume
53
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

In this article, a 0.5 V X‐band low noise amplifier (LNA) composed of two common‐source stages is designed and fabricated with 0.18 um CMOS technology.Based on the structure of cascaded common‐source stages and forward body bias technology, the supply voltage is reduced. Measurement results show that the circuit can operate at supply voltage of 0.5 V with 8 mA current occupation. The gain is 9.1 dB, noise figure is 5.0 dB, and IIP3 is −8.5 dBm at frequency of 8.9 GHz. The whole performance of the amplifier defined by two kinds of figure‐of‐merits is compared with some published LNAs. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:17–20, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25641

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