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Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receivers

✍ Scribed by Y. P. Zhang; K. W. Chew; P. F. Wong

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
204 KB
Volume
16
Category
Article
ISSN
1096-4290

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✦ Synopsis

This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-m 6M1P CMOS technology from the system viewpoint for the first time to provide a higher gain at the high band in order to compensate the high-band signal's extra loss over the air transmission. The LNA drains 6.21 mA of current from a 1.5-V supply voltage and achieves voltage gains of 14 and 22 dB, input S 11 of 15 and 18 dB, and noise figures of 2.45 and 2.51 dB at 2.4 and 5.2 GHz, respectively.

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