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A fully integrated concurrent dual-band CMOS low-noise amplifier

✍ Scribed by Y. P. Zhang; K. W. Chew; P. F. Wong; M. A. Do

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
61 KB
Volume
39
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

This paper presents a fully integrated concurrent dual‐band CMOS low‐noise amplifier (LNA). The LNA is implemented in a standard 0.18‐μm 6M1P CMOS process and is designed from the system viewpoint to provide higher gain at the higher band, for the first time, to compensate the higher‐band signal's extra loss over the air transmission. The LNA drains 5.3 mA of current from a 1.8‐V supply voltage and achieves voltage gains of 16 and 22.5 dB, input return losses of 28 and 27 dB, and noise figures of 3.0 and 3.1 dB at 2.4 and 5.2 GHz, respectively. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 52–53, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11124

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