𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A fully integrated concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology

✍ Scribed by Yu-Tso Lin; Shey-Shi Lu

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
215 KB
Volume
49
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A fully integrated concurrent dual‐band low noise amplifier using InGaP/GaAs HBT technology is demonstrated for the first time. A new methodology is proposed so as to achieve simultaneous narrow‐band gain and impedance matching at multiple frequencies. The experimental results showed that input return losses of −16.2 and −12.1 dB, voltage gains of 16.8 and 20.1 dB, and noise figures of 2.72 and 2.88 dB were obtained at 2 and 4.6 GHz, respectively with power consumption of 12 mW. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2763–2765, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22868

📜 SIMILAR VOLUMES

A monolithic 1.57/5.25-GHz concurrent du
A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology
✍ Shey-Shi Lu; Yo-Sheng Lin; Bo-Wei Lee 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 191 KB

## Abstract A monolithic concurrent dual‐band low‐noise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57‐GHz (GPS) and 5.25‐GHz (ISM) bands. It consumes only 15‐mW power and achieves transdu

A fully integrated concurrent dual-band
A fully integrated concurrent dual-band CMOS low-noise amplifier
✍ Y. P. Zhang; K. W. Chew; P. F. Wong; M. A. Do 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 61 KB

## Abstract This paper presents a fully integrated concurrent dual‐band CMOS low‐noise amplifier (LNA). The LNA is implemented in a standard 0.18‐μm 6M1P CMOS process and is designed from the system viewpoint to provide higher gain at the higher band, for the first time, to compensate the higher‐ba

A 5.2-GHz low-power low-noise amplifier
A 5.2-GHz low-power low-noise amplifier using inGaP-GaAs HBT technology
✍ Chia-Liang Tai; Shey-Shi Lu; Yo-Sheng Lin 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 112 KB

A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first time. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input

Analysis and design of a fully integrate
Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receivers
✍ Y. P. Zhang; K. W. Chew; P. F. Wong 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 204 KB

This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-m 6M1P CMOS

A fully integrated dual-band low-noise a
A fully integrated dual-band low-noise amplifier for bluetooth and wireless LAN applications
✍ Mou Shouxian; Ma Jianguo; Yeo Kiat Seng; Do Manh Anh 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 177 KB

## Abstract A fully integrated dual‐band low‐noise amplifier (LNA) implemented in a standard 0.18‐μm 1P6M CMOS process is presented in this paper. The LNA draws 12‐mA current from a 1.5‐V voltage supply and achieves power gains of 25 and 10 dB, and noise figures of 3.6 and 4 dB at 2.4 and 5.6 GHz r

A 3-mW concurrent 2.4/5.2-GHz dual-band
A 3-mW concurrent 2.4/5.2-GHz dual-band low-noise amplifier for WLAN applications in 0.18-μm CMOS technology
✍ Tai-Hsing Lee; Yo-Sheng Lin 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 249 KB

## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and