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A 5.2-GHz low-power low-noise amplifier using inGaP-GaAs HBT technology

✍ Scribed by Chia-Liang Tai; Shey-Shi Lu; Yo-Sheng Lin

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
112 KB
Volume
45
Category
Article
ISSN
0895-2477

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✦ Synopsis

A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first time. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input return loss is Ϫ32 dB with a voltage gain of 27 dB at 5.2 GHz. An input 1-dB compression point (P 1dB ) and an input 3 rd -order intercept point (IIP3) of Ϫ14 and Ϫ5 dBm are also achieved, respectively. This circuit consumes only small dc power of 6 mW.

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