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An InGaP-GaAs HBT low-noise amplifier for 2.4/5.2/5.7-GHz WLAN applications

✍ Scribed by Yo-Sheng Lin; Chih-Chen Chen


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
160 KB
Volume
43
Category
Article
ISSN
0895-2477

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πŸ“œ SIMILAR VOLUMES


A GaInP/GaAs HBT micromixer for 2.4/5.2/
✍ C. Y. Wang; S. S. Lu; C. C. Meng; Y. S. Lin πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 177 KB

## Abstract A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7‐GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |__S__~11~| is below βˆ’25 dB from DC to 10 GHz with power‐conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7

A 5.2-GHz low-power low-noise amplifier
✍ Chia-Liang Tai; Shey-Shi Lu; Yo-Sheng Lin πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 112 KB

A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first time. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input

A concurrent multiband InGaP-GaAs HBT LN
✍ Yo-Sheng Lin; Kun-Nan Liao πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 202 KB

A temperature-insensitive (Οͺ25Β°C-175Β°C) monolithic concurrent multiband low-noise amplifier (LNA) for 1.8/1.9-GHz GSM, 2.4/4.9/5.2/5.7-GHz WLAN, and 5-7-GHz ultra-wideband (UWB) system applications is realized using a low-cost 2-m InGaP-GaAs HBT technology. The first stage of the LNA provides high g

A SiGe micromixer for 2.4/5.2/5.7-GHz mu
✍ C. Y. Wang; S. S. Lu; C. C. Meng; Y. S. Lin πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 149 KB

## Abstract A SiGe micromixer for 2.4/5.2/5.7‐GHz multiband WLAN applications is demonstrated for the first time. Our experimental results show that the input return loss |__S__~11~| is below βˆ’18 dB from DC to 20 GHz with voltage gains of 32, 26, and 25 dB at frequencies of 2.4, 5.2, and 5.7 GHz, r

A 3-mW concurrent 2.4/5.2-GHz dual-band
✍ Tai-Hsing Lee; Yo-Sheng Lin πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 249 KB

## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and