## Abstract A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7βGHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |__S__~11~| is below β25 dB from DC to 10 GHz with powerβconversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7
An InGaP-GaAs HBT low-noise amplifier for 2.4/5.2/5.7-GHz WLAN applications
β Scribed by Yo-Sheng Lin; Chih-Chen Chen
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 160 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0895-2477
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π SIMILAR VOLUMES
A 5.2-GHz monolithic low-power low-noise amplifier (LNA) with a quasi-cascode configuration using InGaP-GaAs HBT technology is reported for the first time. A state-of-the-art noise figure of 2.39 dB at 5.2 GHz is obtained among all bipolar LNAs with a fully on-chip input-matching network. The input
A temperature-insensitive (Οͺ25Β°C-175Β°C) monolithic concurrent multiband low-noise amplifier (LNA) for 1.8/1.9-GHz GSM, 2.4/4.9/5.2/5.7-GHz WLAN, and 5-7-GHz ultra-wideband (UWB) system applications is realized using a low-cost 2-m InGaP-GaAs HBT technology. The first stage of the LNA provides high g
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