## Abstract A concurrent multiband low‐noise amplifier (LNA) for 1.8/1.9‐GHz GSM, 2.4/5.2/5.7‐GHz WLAN, and 5–7‐GHz ultra‐wideband (UWB) system applications is realized using 0.35‐μm SiGe BiCMOS technology. The LNA occupies an area of only 600 × 300 μm, excluding the test pads, because only two ind
A concurrent multiband InGaP-GaAs HBT LNA for 1.8/1.9-GHz GSM, 2.4/4.9/5.2/5.7-GHz WLAN, and 5–7-GHz ultra-wideband (UWB) system applications
✍ Scribed by Yo-Sheng Lin; Kun-Nan Liao
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 202 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
A temperature-insensitive (Ϫ25°C-175°C) monolithic concurrent multiband low-noise amplifier (LNA) for 1.8/1.9-GHz GSM, 2.4/4.9/5.2/5.7-GHz WLAN, and 5-7-GHz ultra-wideband (UWB) system applications is realized using a low-cost 2-m InGaP-GaAs HBT technology. The first stage of the LNA provides high gain and input matching simultaneously at the 1.8/1.9-GHz GSM, 2.4/4.9/5.2/5.7-GHz WLAN, and 5-7-GHz UWB bands. The output matching of the second stage was realized by using shunt-shunt feedback. It consumes only 9-mW power and achieves transducer gains (
📜 SIMILAR VOLUMES
## Abstract A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7‐GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |__S__~11~| is below −25 dB from DC to 10 GHz with power‐conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7