A concurrent multiband SiGe LNA for 1.8/1.9-GHz GSM, 2.4/5.2/5.7-GHz WLAN, and 5–7-GHz ultrawideband (UWB) system applications

✍ Scribed by Yo-Sheng Lin; Kun-Nan Liao

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 239 KB
• Volume: 47
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.21074

✦ Synopsis

Abstract

A concurrent multiband low‐noise amplifier (LNA) for 1.8/1.9‐GHz GSM, 2.4/5.2/5.7‐GHz WLAN, and 5–7‐GHz ultra‐wideband (UWB) system applications is realized using 0.35‐μm SiGe BiCMOS technology. The LNA occupies an area of only 600 × 300 μm, excluding the test pads, because only two inductors are used. The first stage of the LNA provides high gain and input matching simultaneously at the 1.8/1.9‐GHz GSM and 2.4/5.2/5.7‐GHz WLAN bands. The output matching of the second stage is realized by shunt‐shunt feedback. It consumes only 14.4‐mW power and achieved transducer gains (S~21~) of 26.6, 26.3, 24.6, 15.8, and 14.8 dB, input return losses (S~11~) of‐8.4,‐9.9,‐22.4,‐12.3, and‐17.1 dB, noise figures of 1.81, 1.9, 2.41, 3.4, and 2.81 dB (for fully on‐chip input matching), and noise figures of 1.5, 1.6, 2.0, 2.82, and 2.32 dB (for off‐chip input matching) at 1.8, 1.9, 2.4, 5.2, and 5.7 GHz, respectively. In addition, very low and very flat NF versus frequency characteristics (below 3.0 dB) are achieved over a very wide frequency range (from 5 to 7.2 GHz), which means the implemented LNA is also very suitable for 5–7‐GHz UWB‐system applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 47: 36–41, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21074