✦ LIBER ✦

A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGaP/GaAs HBT technology

✍ Scribed by Shey-Shi Lu; Yo-Sheng Lin; Bo-Wei Lee

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 191 KB
Volume: 42
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.20206

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✦ Synopsis

Abstract

A monolithic concurrent dual‐band low‐noise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57‐GHz (GPS) and 5.25‐GHz (ISM) bands. It consumes only 15‐mW power and achieves transducer gains (S~21~) of 25.3 and 14.3 dB, input return losses (S~11~) of 6.8 and 11.5 dB, reverse isolation (S~12~) of −30.8 and −32.2 dB, and noise figures of 2.55 and 4.5 dB at these two bands, respectively. The performance at 5.25 GHz is comparable with the 2.45/5.25‐GHz concurrent dual‐band CMOS LNA with a bonding wire as the gate inductor using 0.35‐m CMOS technology 1. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 58–60, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20206

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