## Abstract In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS techno
A 2.4 GHz ultra low power subthreshold CMOS low-noise amplifier
✍ Scribed by Lim Kok Meng; Ng Choon Yong; Yeo Kiat Seng; Do Manh Anh
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 121 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 2.4 GHz subthreshold CMOS low‐noise amplifier (LNA) employing current‐reuse technique is presented for the first time. The circuit measuring 1050 × 723 μm^2^ is designed using CHRT's 0.18 μm RF CMOS technology. With the push–pull configuration, the amplifier simulated using Spectre® has a gain of 9.8 dB, IIP3 of −2.7 dBm, and NF of 3.6 dB, while consuming a mere 650 μA from a 1 V supply. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 743–744, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22292
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