✦ LIBER ✦

Ka-band 0.18 μm CMOS low noise amplifier with 5.2 dB noise figure

✍ Scribed by Win-Ming Chang; Zi-Hao Hsiung; Christina F. Jou

Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 220 KB
Volume: 49
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.22383

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✦ Synopsis

Abstract

A Ka‐band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 μm CMOS technology. The fabricated Ka‐band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded stages LNA consume 15.58 mA from 1 V power supply. Compared with the recent published literatures, this LNA operates at the highest frequency ever reported by standard bulk 0.18 μm CMOS process. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1187–1189, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22383

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