## Abstract A three‐stage 30‐GHz low noise amplifier (LNA) was designed and fabricated in a standard 0.18‐μm CMOS technology. The LNA has demonstrated a 10‐dB gain and a minimum noise figure of 5.2 dB at 30 GHz. The achieved input 1‐dB compression point (IP~1 dB~) and third order intercept point (I
23-GHz low-noise amplifier using parallel feedback in 0.18-μm CMOS
✍ Scribed by B. M. Frank; M. M. Hossain; Y. M. M. Antar
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 120 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A three‐stage low‐noise amplifier (LNA) fabricated in a standard 0.18‐μm CMOS process (f~T~ = 45 GHz) with a maximum gain of 18 dB at 23.2 GHz and a 5.8‐dB noise figure is presented. Parallel feedback between the gate and drain is used in all three stages. This configuration also provides much better linearity than other LNAs presented by resonating out the effect of C~gd~. The amplifier has an output‐referred 3^rd^‐order intercept of 10 dBm, and a 3‐dB bandwidth of approximately 1 GHz. This paper demonstrates that parallel feedback is a viable technique for the design of 20+‐GHz CMOS LNAs. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 309–312, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20806
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