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A band selected 3.1–30.1 GHz distributed amplifier in 0.18-μm CMOS technology

✍ Scribed by Wu-Shiung Feng; Chien-Cheng Wei; Hui-Chen Hsu; Chia-Hsun Chen; Prasenjit Chatterjee; Ling Kung

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
335 KB
Volume
53
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A band‐selected 3.1–30.1 GHz CMOS distributed amplifier (DA) for extended UWB application is presented in this article. The proposed circuit was designed and fabricated with a 0.18‐μm CMOS technology. This circuit uses a sharpening technique to improve the frequency response from low‐pass to bandpass property, for the requirement of limited frequency band. This DA also adopts the inductive peaking technique to increase circuit's gain and bandwidth. This DA has a measured maximum power gain of 7.5 dB. The supply voltage and biasing current are 1.8 V and 28.6 mA, with total DC power of 51.48 mW. When compared with the standard DAs published over the past years, this circuit offers good abilities in band selectivity, acceptable power gain, low noise figures, and large‐signal performances. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26139

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