๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The epitaxial growth of cadmium sulphide on gallium arsenide substrates

โœ Scribed by B.J. Curtis; H. Brunner

Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
609 KB
Volume
6
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Growth of gallium antimonide epitaxial l
Growth of gallium antimonide epitaxial layers on indium arsenide substrates
โœ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 347 KB ๐Ÿ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e

The epitaxial growth of gallium arsenide
The epitaxial growth of gallium arsenide using triethylarsine
โœ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo

The growth of gallium arsenide films fro
The growth of gallium arsenide films from a thin solution layer between substrates
โœ Yu. B. Bolchovitianov; R. I. Bolchovitianova; P. L. Melnikov ๐Ÿ“‚ Article ๐Ÿ“… 1973 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 460 KB ๐Ÿ‘ 2 views

## Abstract The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function o